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A rigid band model for recombination in a-Si alloys

Authors :
T.M. Searle
T.-H. Wang
Source :
Journal of Non-Crystalline Solids. :280-283
Publication Year :
1996
Publisher :
Elsevier BV, 1996.

Abstract

Two existing rigid band models of low temperature luminescence in a-Si:H are compared and their difficulties examined. A new model is proposed which includes the essential features of both, and which explains the width and Stokes shift of the spectra without problems of large excitation power shifts in peak position.

Subjects

Subjects :
Photoluminescence
Silicon
Chemistry
chemistry.chemical_element
Rigid-band model
Condensed Matter Physics
Spectral line
Electronic, Optical and Magnetic Materials
symbols.namesake
Position (vector)
Stokes shift
Materials Chemistry
Ceramics and Composites
symbols
Atomic physics
Luminescence
Excitation

Details

ISSN :
00223093
Database :
OpenAIRE
Journal :
Journal of Non-Crystalline Solids
Accession number :
edsair.doi...........c5ae8e829960e677e10718cbe44be078
Full Text :
https://doi.org/10.1016/0022-3093(95)00737-7
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