Back to Search
Start Over
Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory
- Source :
- IEEE Electron Device Letters. 41:224-227
- Publication Year :
- 2020
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2020.
-
Abstract
- In this letter, the electrical characteristics of Ti/HfO2/TiN resistive random access memory (RRAM) were thoroughly investigated. An abnormal current degradation was seen in the DC sweeping cycle. Both the on-state and off-state current clearly exhibited degradation with time. Next, current fitting analysis was used to investigate the carrier transport mechanisms. The results indicate that the on-state carrier transport mechanism changed from space-charge-limited current into hopping conduction after cycle sweeping. However, the off-state current changes from Schottky thermal emission to hopping conduction. Based on comparisons of different Schottky distances and Schottky barriers, physical models were proposed to explain the abnormal current degradation behavior. Finally, COMSOL electric field simulations were used to show the electric field distribution around the conducting filament (CF), and the conducting model was subsequently verified.
- Subjects :
- 010302 applied physics
Resistive touchscreen
Materials science
Condensed matter physics
chemistry.chemical_element
Schottky diode
Thermal conduction
01 natural sciences
Electronic, Optical and Magnetic Materials
Resistive random-access memory
chemistry
Electric field
0103 physical sciences
Electrical and Electronic Engineering
Current (fluid)
Tin
Degradation (telecommunications)
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 41
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........c5950db7fd5a85c58d8fe3f0c95f75ba