Back to Search Start Over

Sputter deposition technology for Al(1−x)ScxN films with high Sc concentration

Authors :
Gabriel Christmann
Stefan Mertin
Bernd Heinz
Marc Alexandre Dubois
Paul Muralt
Sylvain Nicolay
Maurus Tschirky
Oliver Rattunde
Source :
2017 China Semiconductor Technology International Conference (CSTIC).
Publication Year :
2017
Publisher :
IEEE, 2017.

Abstract

Aluminium scandium nitride (Al 1−x Sc x N) with its strongly enhanced piezoelectric response is the upcoming piezoelectric material of choice in next generation RF filters, sensors, actuators and energy harvesting devices. This paper will concentrate on the deposition technology for Al 1−x Sc x N films with high Sc content. Films with Sc concentrations close to 43 at% have been grown on 200-mm substrates using a cluster type sputter deposition tool. The piezoelectric response will be discussed and correlated with the deposition parameters and film structural properties. The steps required to deliver a high-volume production solution for high Sc concentration will be described.

Details

Database :
OpenAIRE
Journal :
2017 China Semiconductor Technology International Conference (CSTIC)
Accession number :
edsair.doi...........c56ab954630ef0b63bfb99aa57ae875b