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Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

Improvement of the hole mobility of SnO epitaxial films grown by pulsed laser deposition

Authors :
Yoshiyuki Yoshida
Naoto Kikuchi
Makoto Minohara
Yoshihiro Aiura
Hiroshi Kumigashira
Source :
Journal of Materials Chemistry C. 7:6332-6336
Publication Year :
2019
Publisher :
Royal Society of Chemistry (RSC), 2019.

Abstract

Stannous oxide, SnO, is a promising material for practical applications as a p-type transparent oxide semiconductor. However, in its thin-film form, the reported semiconducting properties of SnO are unfortunately insufficient for the development of oxide devices. In this work, we report that the hole mobility of SnO epitaxial films grown by pulsed laser deposition can be improved by reducing the growth temperature. The hole mobility is estimated to be approximately 10 cm2 V−1 s−1 at room temperature, which is nearly four times higher than the one originally reported for epitaxial films fabricated at the conventional growth temperature. In addition, the observed carrier density of the fabricated SnO films is slightly lower compared with that of the ones fabricated at the conventional growth temperature. This suggests that the Sn vacancy formation as a hole carrier dopant is suppressed by the reduction in the growth temperature. This result offers the key for the improvement of the performance of oxide thin-film devices.

Details

ISSN :
20507534 and 20507526
Volume :
7
Database :
OpenAIRE
Journal :
Journal of Materials Chemistry C
Accession number :
edsair.doi...........c534d7830ed1046ac263b0d58b0b30a2
Full Text :
https://doi.org/10.1039/c9tc01297d