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Electrical properties of Si−SiO2 structures treated in helium plasma
- Source :
- Microelectronics Journal. 18:5-12
- Publication Year :
- 1987
- Publisher :
- Elsevier BV, 1987.
-
Abstract
- Experimental data are presented for the influence of helium plasma on the electrical properties of Si−SiO 2 structures with dry thermal oxide (d=16−72 nm). It is found that for strongly damaged structures low temperature helium plasma introduces acceptor-type interface states near the conduction band edge and has an annealing effect on the deep acceptor-type states. It has also shown that the initial characteristics of the Si−SiO 2 structures and the gas used are critical for the plasma-forming of both the interface and inversion channel properties.
Details
- ISSN :
- 00262692
- Volume :
- 18
- Database :
- OpenAIRE
- Journal :
- Microelectronics Journal
- Accession number :
- edsair.doi...........c5302c03619558e63549600d20b8d96a