Ideal unreactive metal/semiconductor interfaces: The case ofZn/ZnSe(001)

Authors :: Nadia Binggeli
Silvia Rubini
Christophe Berthod
D. Kumar
Emanuele Pelucchi
Marco Lazzarino
A. Franciosi
Alfonso Baldereschi
Source :: Physical Review B. 63
Publication Year :: 2001
Publisher :: American Physical Society (APS), 2001.
Abstract: Zn/ZnSe(001) interfaces fabricated by metal deposition at room temperature onto ZnSe(001) c(2{times}2), 2{times}1, and 1{times}1 surfaces were studied by means of x-ray photoemission spectroscopy and current-voltage and capacitance-voltage measurements. All junctions exhibited an ideal unreactive behavior and an identical Schottky barrier height of 1.85 eV (for p-type conduction). Ab initio pseudopotential calculations for model interface configurations provide a microscopic explanation of the different behavior of Zn/ZnSe junctions as compared to Al/ZnSe and Au/ZnSe junctions.