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Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes

Authors :
Masanori Nagase
Mitsuaki Shimizu
Tokio Takahashi
Source :
Japanese Journal of Applied Physics. 58:091001
Publication Year :
2019
Publisher :
IOP Publishing, 2019.

Subjects

Subjects :
Non-volatile memory
Materials science
Physics and Astronomy (miscellaneous)
business.industry
General Engineering
General Physics and Astronomy
Optoelectronics
business
Quantum tunnelling
Diode

Details

ISSN :
13474065 and 00214922
Volume :
58
Database :
OpenAIRE
Journal :
Japanese Journal of Applied Physics
Accession number :
edsair.doi...........c4ba2fe403593794426dcf24539a29b4
Full Text :
https://doi.org/10.7567/1347-4065/ab1b58
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