Characterization of Reconfigurable FETs Fabricated on Si Epilayer on SiO2

We report characteristics of reconfigurable field effect transistors (FETs) fabricated on locally grown Si epilayer on amorphous SiO 2 . The present devices show ideal electrical properties, i.e., flexible change from n-type to p-type FET or vice versa according to the polarity of gate bias. Besides current-voltage features under various operation conditions, the effect of geometrical structure like spacing between control and polarity gates on drain current was investigated. We explained the measured electrical properties through the comparative studies of simulation-based charge distribution and microscopybased real dimension of the present devices.