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Effect of yttrium doping on the structure, dielectric multiferroic and magnetodielectric properties of Bi5Ti3FeO15 ceramics
- Source :
- Journal of Materials Science: Materials in Electronics. 31:4345-4353
- Publication Year :
- 2020
- Publisher :
- Springer Science and Business Media LLC, 2020.
-
Abstract
- Multiferroic Bi5−xYxTi3FeO15 (BYTF-x, x = 0, 0.1, 0.3, 0.5, 0.7) ceramics were synthesized through the conventional solid-state reaction. The structure, dielectric, multiferroic and magnetodielectric properties of BYTF-x were investigated in detail. X-ray diffraction confirmed that all the samples were layered Aurivillius structure. Upon increasing Y content, the grain size of samples slightly decreases. The dielectric permittivity increased with Y doped. The Y doping has no effect on microstructural changes of plate-like grains which verified though field-emission scanning electron microscopy. The minimum remanent polarization (2Pr = 2.48 μc/cm2) was observed in BYTF-0.3 ceramic and the maximum magnetodielectric coefficient value of 1.23% was obtained in BYTF-0.3 ceramic perhaps result from the coexistence of Fe2+ and Fe3+. Additionally, weak ferromagnetic is only found in BYTF-0.3 ceramic. The ferromagnetism can be attributed to ferromagnetic double exchange interactions (Fe2+–O–Fe3+) and the spin canting of tilting FeO6 octahedra via the Dzyaloshinskii–Moriya interaction. These results indicate that Y doping Aurivillius phase may be the potential candidates for exploring superior room-temperature multiferroics.
- Subjects :
- 010302 applied physics
Materials science
Condensed matter physics
biology
Doping
chemistry.chemical_element
Yttrium
Dielectric
Condensed Matter Physics
biology.organism_classification
01 natural sciences
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Aurivillius
chemistry
Ferromagnetism
visual_art
0103 physical sciences
visual_art.visual_art_medium
Multiferroics
Ceramic
Electrical and Electronic Engineering
Spin canting
Subjects
Details
- ISSN :
- 1573482X and 09574522
- Volume :
- 31
- Database :
- OpenAIRE
- Journal :
- Journal of Materials Science: Materials in Electronics
- Accession number :
- edsair.doi...........c49d6fcfddd9d9b6ce02dd9720de3320
- Full Text :
- https://doi.org/10.1007/s10854-020-02992-w