Optimization of Metal Hard Mask Tin for Tiny Particle Reduction

Metal hard mask TiN was induced as patterning film due to less ULK damage, but TiN tiny particle can make metal line open which is unacceptable. In this paper, the ramp mode of DC power during TiN deposition process was analyzed for tiny particle reduction. TiN as-dep defect scan results showed that DC power with slower ramp rate at ignition and pump down step can reduce tiny particle obviously. According to hard mask AEI defect scan results, metal open defect related with TiN film cannot be found.