Acceptor-Doping in ZnS/GaAs Grown by Means of the Post-Heated Molecular Beam Epitaxy

Authors :: H. Kobashi
K. Kitani
Masanori Ohishi
Minoru Yoneta
C. Hatano
Hiroshi Saito
Source :: Materials Science Forum. :69-72
Publication Year :: 1995
Publisher :: Trans Tech Publications, Ltd., 1995.

Subjects :: Materials science
Mechanics of Materials
business.industry
Mechanical Engineering
Optoelectronics
Acceptor doping
General Materials Science
Metalorganic vapour phase epitaxy
Condensed Matter Physics
business
Molecular beam epitaxy

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