Development of a low temperature doping technique for applications in poly‐si TFT on plastic substrates

A low temperature doping technique to be applied in poly‐Si TFT's on plastic substrates was investigated. Heavily‐doped amorphous silicon layers were deposited on poly‐Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of 120 Ĉ, and a sheet resistance of as low as 300 O/sq. was obtained.