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InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm
- Source :
- Semiconductors. 33:586-589
- Publication Year :
- 1999
- Publisher :
- Pleiades Publishing Ltd, 1999.
-
Abstract
- Semiconductor heterostructures with vertical optical cavities with active regions, based on arrays of InAs quantum dots inserted in an external InGaAs quantum well, have been obtained by molecular-beam epitaxy on GaAs substrates. The dependences of the reflection and photoluminescence spectra on the structural characteristics of the active region and optical cavities have been investigated. The proposed heterostructures are potentially suitable for optoelectronic devices at wavelengths near 1.3 µm.
- Subjects :
- Materials science
Photoluminescence
Condensed Matter::Other
business.industry
Physics::Optics
Heterojunction
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Condensed Matter Physics
Epitaxy
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials
Condensed Matter::Materials Science
Wavelength
Optics
Reflection (mathematics)
Quantum dot
Quantum dot laser
Optoelectronics
business
Quantum well
Subjects
Details
- ISSN :
- 10906479 and 10637826
- Volume :
- 33
- Database :
- OpenAIRE
- Journal :
- Semiconductors
- Accession number :
- edsair.doi...........c38ec3c6078f0716c1cff992d9eb800b