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Microwave Annealing Technologies for Variability Reduction of Nanodevices: A Review of Their Impact on FinFETs
- Source :
- IEEE Nanotechnology Magazine. 13:34-38
- Publication Year :
- 2019
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2019.
-
Abstract
- The rapid reduction of feature size in CMOS devices causes their variability to increase, thus reducing the circuit yield [1]-[3]. In particular, the static random access memory (SRAM) cell uses the smallest transistor to achieve high-density integration, the effect of which is a lower yield [4]. The reduction of variability is, therefore, becoming the most important concern for CMOS devices. In this article, we review the effectiveness of introducing multigate devices and microwave annealing (MWA) for performance enhancement.
- Subjects :
- 010302 applied physics
Materials science
business.industry
Annealing (metallurgy)
Mechanical Engineering
Microwave annealing
Lower yield
Transistor
01 natural sciences
law.invention
Microwave imaging
CMOS
law
Logic gate
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
Optoelectronics
Static random-access memory
Electrical and Electronic Engineering
business
Subjects
Details
- ISSN :
- 19427808 and 19324510
- Volume :
- 13
- Database :
- OpenAIRE
- Journal :
- IEEE Nanotechnology Magazine
- Accession number :
- edsair.doi...........c359a8894b1234bdc0d885ac46a32151