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High-speed GaInAs Schottky photodetector
- Source :
- Electronics Letters. 21:180
- Publication Year :
- 1985
- Publisher :
- Institution of Engineering and Technology (IET), 1985.
-
Abstract
- A Schottky contact photodiode on p-type GaInAs for application at λ=1.3–1.6 μm has been fabricated and tested. The coaxial type device shows an external quantum efficiency of 19% at λ=1.27 μm, and rise and fall times of less than 15 ps.
Details
- ISSN :
- 00135194
- Volume :
- 21
- Database :
- OpenAIRE
- Journal :
- Electronics Letters
- Accession number :
- edsair.doi...........c3311655d97e841834ea5172b1f53c25
- Full Text :
- https://doi.org/10.1049/el:19850127