RESISTIVE SWITCHING AND THRESHOLD CURRENT OF Cr-DOPED SrTiO3 THIN FILMS DEPOSITED BY PULSED LASER DEPOSITION

The resistive switching of 0.2% Cr-doped SrTiO3 (Cr-STO) thin films grown on (La0.5, Sr0.5)CoO3/SrTiO3 (LSCO/STO) substrate have been investigated. The structure in a metal-insulator-metal (MIM) i.e., Pt/Cr-STO/LSCO, shows hysteretic and asymmetric behaviors in current-voltage (I-V) characteristics. The current-voltage characteristics are attributed to the resistive switching of Cr-STO thin films between high resistance state (HRS) and low resistance state (LRS) by applying pulsed or dc bias voltage stress. The current and voltage ramp sweeps in the I-V measurement reveal that threshold current is required to induce the resistive switching from HRS to LRS in the negative voltage region.