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Low resistance palladium/molybdenum based ohmic contacts to n-GaSb grown on GaAs
- Source :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:04E108
- Publication Year :
- 2014
- Publisher :
- American Vacuum Society, 2014.
-
Abstract
- Low resistance ohmic contacts were fabricated on n-type GaSb grown by molecular beam epitaxy. N-type GaSb epilayers with different doping concentrations and thicknesses were fabricated and studied in order to investigate the current transport mechanism between the metal contacts and the semiconductor. Different metallization schemes were implemented to achieve the lowest possible contact resistance. Rapid thermal annealing was performed at various temperatures to achieve the optimal gold penetration into the GaSb epilayers for low resistance. Ohmic contact fabrication and electrical characterization are discussed in detail. The microstructure analysis of the semiconductor and metal contact interfaces was performed using cross-section transmission electron microscopy and energy dispersive spectroscopy. Specific contact resistances as low as 3 × 10−6 Ω cm2 were obtained.
- Subjects :
- Materials science
Fabrication
business.industry
Process Chemistry and Technology
Contact resistance
Doping
Energy-dispersive X-ray spectroscopy
Microstructure
Surfaces, Coatings and Films
Electronic, Optical and Magnetic Materials
Semiconductor
Materials Chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Instrumentation
Ohmic contact
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 21662754 and 21662746
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
- Accession number :
- edsair.doi...........c2bdda1cf3c17db667fd86d0d20fb836