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Low resistance palladium/molybdenum based ohmic contacts to n-GaSb grown on GaAs

Authors :
Nassim Rahimi
Luke F. Lester
Ganesh Balakrishnan
Andrew Aragon
Orlando S. Romero
D. M. Shima
Thomas J. Rotter
Sayan D. Mukherjee
Source :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 32:04E108
Publication Year :
2014
Publisher :
American Vacuum Society, 2014.

Abstract

Low resistance ohmic contacts were fabricated on n-type GaSb grown by molecular beam epitaxy. N-type GaSb epilayers with different doping concentrations and thicknesses were fabricated and studied in order to investigate the current transport mechanism between the metal contacts and the semiconductor. Different metallization schemes were implemented to achieve the lowest possible contact resistance. Rapid thermal annealing was performed at various temperatures to achieve the optimal gold penetration into the GaSb epilayers for low resistance. Ohmic contact fabrication and electrical characterization are discussed in detail. The microstructure analysis of the semiconductor and metal contact interfaces was performed using cross-section transmission electron microscopy and energy dispersive spectroscopy. Specific contact resistances as low as 3 × 10−6 Ω cm2 were obtained.

Details

ISSN :
21662754 and 21662746
Volume :
32
Database :
OpenAIRE
Journal :
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Accession number :
edsair.doi...........c2bdda1cf3c17db667fd86d0d20fb836