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Infrared proximity sensor using organic light-emitting diode with quantum dots converter

Authors :
Sheng-fu Horng
Wen-Chang Chen
Chu-Chen Chueh
Han Cheng Yeh
Chih Feng Wang
Yu Chiang Chao
Hsin-Fei Meng
Teng-Ming Chen
En-Chen Chen
Chin Ping Huang
Yun Chi Liang
Hsiao-Wen Zan
Source :
Organic Electronics. 13:2312-2318
Publication Year :
2012
Publisher :
Elsevier BV, 2012.

Abstract

An efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2,3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD

Details

ISSN :
15661199
Volume :
13
Database :
OpenAIRE
Journal :
Organic Electronics
Accession number :
edsair.doi...........c278940debbb92e41ea035affdb10ce4