Anisotropic interface characteristics of bilayer GeSe based field effect transistors

Subjects

Subjects :

Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Electronic, Optical and Magnetic Materials

Details

ISSN :

13869477

Volume :

142

Database :

OpenAIRE

Journal :

Physica E: Low-dimensional Systems and Nanostructures

Accession number :

edsair.doi...........c23e0711517b4c61b40b9a893e7895af

Full Text :

https://doi.org/10.1016/j.physe.2022.115317