Low-voltage organic transistor with subfemtoliter inkjet source-drain contacts

We have successfully achieved a transconductance of 0.76 S/m for organic thin-film transistors with 4 V operation, which is the largest value reported for organic transistors fabricated using printing methods. Using a subfemtoliter inkjet, silver electrodes with a line width of 1 µm and a channel length of 1 µm were printed directly onto an air-stable, high-mobility organic semiconductor that was deposited on a singlemolecule self-assembled monolayer-based gatedielectric. Onreducingthe droplet volume(0.5 fl) ejectedfromthe inkjet nozzle,which reduces sintering temperatures down to 90 °C, the inkjet printing of silver electrodes was accomplished without damage to the organic semiconductor.