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Influence of a ZnO layer on Seebeck coefficients in asymmetric double-barrier tunnel junctions

Authors :
Reza Daqiq
Source :
Materials Science in Semiconductor Processing. 74:255-260
Publication Year :
2018
Publisher :
Elsevier BV, 2018.

Abstract

The Seebeck coefficients are studied in asymmetric double-barrier magnetic tunnel junctions (DBMTJs) with the structures as CoFeB/MgO/ZnO/MgO/LSMO. In the linear response regime, oscillatory behavior is observed with change in the ZnO layer thickness because of the resonant tunneling in the DBMTJs. Effects of average temperature and magnetizations orientation are also discussed. It is found that the Seebeck coefficients are greater in the DBMTJs than asymmetric single-barrier MTJs (SBMTJs). Therefore, it is to be achieved the greater Seebeck coefficients by choosing a proper thickness for the ZnO layer in the proposed asymmetric DBMTJs.

Details

ISSN :
13698001
Volume :
74
Database :
OpenAIRE
Journal :
Materials Science in Semiconductor Processing
Accession number :
edsair.doi...........c1e0aa10d2f0095b552bdd5b8be25027