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Influence of a ZnO layer on Seebeck coefficients in asymmetric double-barrier tunnel junctions
- Source :
- Materials Science in Semiconductor Processing. 74:255-260
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- The Seebeck coefficients are studied in asymmetric double-barrier magnetic tunnel junctions (DBMTJs) with the structures as CoFeB/MgO/ZnO/MgO/LSMO. In the linear response regime, oscillatory behavior is observed with change in the ZnO layer thickness because of the resonant tunneling in the DBMTJs. Effects of average temperature and magnetizations orientation are also discussed. It is found that the Seebeck coefficients are greater in the DBMTJs than asymmetric single-barrier MTJs (SBMTJs). Therefore, it is to be achieved the greater Seebeck coefficients by choosing a proper thickness for the ZnO layer in the proposed asymmetric DBMTJs.
- Subjects :
- 010302 applied physics
Materials science
Condensed matter physics
Mechanical Engineering
02 engineering and technology
021001 nanoscience & nanotechnology
Condensed Matter Physics
Double barrier
01 natural sciences
Layer thickness
Condensed Matter::Materials Science
Mechanics of Materials
Condensed Matter::Superconductivity
Orientation (geometry)
0103 physical sciences
Physics::Atomic and Molecular Clusters
General Materials Science
0210 nano-technology
Layer (electronics)
Quantum tunnelling
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 74
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........c1e0aa10d2f0095b552bdd5b8be25027