Nickel germanide formation via solid phase epitaxial regrowth of amorphous germanium

Authors :: Brett C. Johnson
M. Leong
Jeffrey C. McCallum
Anthony S. Holland
S. Kandasamy
Source :: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices.
Publication Year :: 2010
Publisher :: IEEE, 2010.
Abstract: The effect of Ni on the kinetics of solid phase epitaxial re-crystallization of amorphous germanium films is investigated with Raman spectroscopy. Both Ni implantation and deposition are employed.

Subjects :: Materials science
Annealing (metallurgy)
Doping
Metallurgy
Kinetics
chemistry.chemical_element
Germanium
Epitaxy
Germanide
symbols.namesake
chemistry.chemical_compound
Nickel
chemistry
Chemical engineering
symbols
Raman spectroscopy

Database :: OpenAIRE
Journal :: 2010 Conference on Optoelectronic and Microelectronic Materials and Devices
Accession number :: edsair.doi...........c1d90cf70559c1822c942eee5dad30a5
Full Text :: https://doi.org/10.1109/commad.2010.5699719

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