Structural studies of amorphous semiconductors

This paper describes structural studies of the reversible memory type electrical transition1) in amorphous films of Ge-Te2) based alloys. The films, as evaporated, are high resistance intrinsic-like semiconductors. After subjection to a sufficiently high electrical field to bring about a transition to a low resistance state, and a further delay during which there is current flow, a portion of the material is transformed to a semipermanent low resistance state. That is, the material remains in a low resistance state without further application of an electric field. The material may be switched back to a high resistance state through application of a current pulse with a rapid turn off. This paper reports initial results of studies designed to elucidate structural aspects of the phase transition in these materials.