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Enhancement of quantum well intermixing through sputtered SiO2 on InGaAs layer
- Source :
- 2012 17th Opto-Electronics and Communications Conference.
- Publication Year :
- 2012
- Publisher :
- IEEE, 2012.
-
Abstract
- Enhancement of quantum well intermixing (QWI) through sputtered SiO 2 on InGaAs layer is demonstrated. From large thermal expansion coefficient, blue shift of 60nm improvement over InP junction, also verified by laser facbrication.
Details
- Database :
- OpenAIRE
- Journal :
- 2012 17th Opto-Electronics and Communications Conference
- Accession number :
- edsair.doi...........c169ed21e6488602e34b38201606149e
- Full Text :
- https://doi.org/10.1109/oecc.2012.6276462