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A 192-Gb 12-High 896-GB/s HBM3 DRAM With a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization
- Source :
- IEEE Journal of Solid-State Circuits. 58:256-269
- Publication Year :
- 2023
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2023.
- Subjects :
- Electrical and Electronic Engineering
Subjects
Details
- ISSN :
- 1558173X and 00189200
- Volume :
- 58
- Database :
- OpenAIRE
- Journal :
- IEEE Journal of Solid-State Circuits
- Accession number :
- edsair.doi...........c1676bfce333d7d2f840eaab935078ed