Back to Search Start Over

Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique

Authors :
Yasuo Nara
Naoki Fukata
Ryu Hasunuma
Sciji Inumiya
Toyohiro Chikyow
Masami Takase
Kikuo Yamabe
Kenji Ohmori
Jun Chen
Naoto Umezawa
Takashi Sekiguchi
Source :
Solid State Phenomena. :449-454
Publication Year :
2007
Publisher :
Trans Tech Publications, Ltd., 2007.

Abstract

We have succeeded in imaging the leakage sites of hafnium silicate gate dielectrics of metal-oxide-semiconductor field-effect transistors (MOSFETs) by using electron-beam-induced current (EBIC) method. Leakage sites of p-channel MOSFETs were identified as bright spots under appropriate reverse bias condition when the electron beam energy is high enough to generate carriers in the silicon substrate. Most of the leakage sites were observed in the peripheries of shallow trench isolation. These results suggest that some process induced defects are the cause of leakage in these MOSFETs. Our observation demonstrates the advantage of EBIC characterization for failure analysis of high-k MOSFETs.

Details

ISSN :
16629779
Database :
OpenAIRE
Journal :
Solid State Phenomena
Accession number :
edsair.doi...........c164b97fca44eff41721b059a57a1e40
Full Text :
https://doi.org/10.4028/www.scientific.net/ssp.131-133.449