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Observation of Leakage Sites in High-k Gate Dielectrics in MOSFET Devices by Electron-Beam-Induced Current Technique
- Source :
- Solid State Phenomena. :449-454
- Publication Year :
- 2007
- Publisher :
- Trans Tech Publications, Ltd., 2007.
-
Abstract
- We have succeeded in imaging the leakage sites of hafnium silicate gate dielectrics of metal-oxide-semiconductor field-effect transistors (MOSFETs) by using electron-beam-induced current (EBIC) method. Leakage sites of p-channel MOSFETs were identified as bright spots under appropriate reverse bias condition when the electron beam energy is high enough to generate carriers in the silicon substrate. Most of the leakage sites were observed in the peripheries of shallow trench isolation. These results suggest that some process induced defects are the cause of leakage in these MOSFETs. Our observation demonstrates the advantage of EBIC characterization for failure analysis of high-k MOSFETs.
- Subjects :
- Materials science
Silicon
business.industry
Electron beam-induced current
Transistor
Analytical chemistry
chemistry.chemical_element
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
law.invention
Hafnium
chemistry
law
Shallow trench isolation
MOSFET
Optoelectronics
General Materials Science
business
Leakage (electronics)
High-κ dielectric
Subjects
Details
- ISSN :
- 16629779
- Database :
- OpenAIRE
- Journal :
- Solid State Phenomena
- Accession number :
- edsair.doi...........c164b97fca44eff41721b059a57a1e40
- Full Text :
- https://doi.org/10.4028/www.scientific.net/ssp.131-133.449