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Reduction of Flicker Noise in AlGaN/GaN-Based HFETs After High Electric-Field Stress
- Source :
- IEEE Electron Device Letters. 32:1513-1515
- Publication Year :
- 2011
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2011.
-
Abstract
- We report on the evolution of AlGaN/GaN-based heterojunction field-effect transistor (HFET) operation under high-electric-field stress. Specifically, a 10 ~ 15 dB decrease in the flicker noise is observed after stress in contrast with what has been nominally observed and reported in the literature in the realm of direct-current characteristics. Gate lag measurements revealed a trap state with an activation energy of 0.20 eV in the pristine devices, which manifests itself as a generation-recombination peak in the flicker noise spectrum. This trap state becomes undetectable in gate lag and noise measurements after high-field stress. Analysis shows that the phenomena observed are consistent with the change of surface charge profile during high-electric-field stress.
- Subjects :
- Materials science
Noise measurement
business.industry
Wide-bandgap semiconductor
Gallium nitride
Heterojunction
Electronic, Optical and Magnetic Materials
Stress (mechanics)
chemistry.chemical_compound
chemistry
Electric field
Optoelectronics
Flicker noise
Electrical and Electronic Engineering
business
Noise (radio)
Subjects
Details
- ISSN :
- 15580563 and 07413106
- Volume :
- 32
- Database :
- OpenAIRE
- Journal :
- IEEE Electron Device Letters
- Accession number :
- edsair.doi...........c15da18830fd509e2b5f5dd763a95bbb