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Intersubband Transitions in GaNZAl0.5Ga0.5N Quantum Wells on a-Plane and m-Plane GaN Substrates
- Source :
- Conference on Lasers and Electro-Optics.
- Publication Year :
- 2020
- Publisher :
- Optica Publishing Group, 2020.
-
Abstract
- We experimentally characterize mid-infrared intersubband transitions in identical Al0.5Ga0.5N/GaN heterostructures grown on a- and m-plane GaN substrates. The absorption peaks of the m-plane samples are 10 to 40% narrower than that of the a-plane samples.
- Subjects :
- Materials science
Absorption spectroscopy
Condensed matter physics
Nonlinear optics
Optical polarization
Gallium nitride
Heterojunction
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
01 natural sciences
010309 optics
Condensed Matter::Materials Science
chemistry.chemical_compound
chemistry
Physical vapor deposition
0103 physical sciences
0210 nano-technology
Absorption (electromagnetic radiation)
Quantum well
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- Conference on Lasers and Electro-Optics
- Accession number :
- edsair.doi...........c0e241be728a281401557bea1f1268fa