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Properties of atomic-layer-deposited ultra-thin AlN films on GaAs surfaces
- Source :
- Applied Surface Science. 314:570-574
- Publication Year :
- 2014
- Publisher :
- Elsevier BV, 2014.
-
Abstract
- Properties and passivation effect of ultra-thin AlN films fabricated on InGaAs/GaAs near-surface quantum wells by plasma-enhanced atomic layer deposition are investigated. The role of the coating on the surface is studied by examining the electric field build-up by photoreflectance. Photoluminescence confirms the passivation effect with ultra-thin layers and the reduced electric fields with thicker AlN layers. Atomic force microscopy shows that an ultra-thin AlN layer does not substantially alter the surface morphology.
- Subjects :
- Materials science
Photoluminescence
Passivation
business.industry
technology, industry, and agriculture
Analytical chemistry
General Physics and Astronomy
Surfaces and Interfaces
General Chemistry
engineering.material
Condensed Matter Physics
Surfaces, Coatings and Films
Atomic layer deposition
Coating
Electric field
engineering
Optoelectronics
Thin film
business
Layer (electronics)
Quantum well
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 314
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........c0bb8d8b45de9895a621d80e129222ce