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Synthesis of nickel–zinc–yttrium ferrites: Structural elucidation and dielectric behavior evaluation
- Source :
- Materials Science in Semiconductor Processing. 41:508-512
- Publication Year :
- 2016
- Publisher :
- Elsevier BV, 2016.
-
Abstract
- Novel Ni 0.6 Zn 0.4 Y 2 x Fe 2−2 x O 4 soft spinel ferrites were prepared via double sintering ceramic route. The influence of Y 3+ cations on structural, morphological, electrical and dielectric properties was investigated. X-ray diffraction (XRD) confirmed the formation of single phase spinel structure for 0≤ x ≤0.06 and thereafter a small peak of orthorhombic phase (FeYO 3 ) appeared for x >0.06. The incorporation of yttrium altered the lattice constant. The variation in lattice constant with respect to the Y 3+ contents was non-linear. The variation of lattice constant may be attributed to larger ionic radius of Y 3+ as compare to Fe 3+ cations and solubility limit of substituted cations. Fourier transform infrared (FTIR) spectra showed two strong absorption bands around 600 cm −1 and 400 cm −1 which confirmed the spinel structure. The dc electrical resistivity was found to increase from 5.67×10 5 to 8.48×10 8 Ω cm with the increased Y 3+ contents. The dielectric constant and dielectric loss tangent were significantly impeded by increasing the yttrium contents. The optimized electrical resistivity and reduced dielectric parameters suggest the possible use of these ferrites in the fabrication of microwave devices.
- Subjects :
- 010302 applied physics
Materials science
Ionic radius
Mechanical Engineering
Spinel
Analytical chemistry
Mineralogy
chemistry.chemical_element
02 engineering and technology
Dielectric
Yttrium
engineering.material
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Lattice constant
chemistry
Mechanics of Materials
Electrical resistivity and conductivity
0103 physical sciences
engineering
General Materials Science
Orthorhombic crystal system
Dielectric loss
0210 nano-technology
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 41
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi...........c0a6f6a16e5ee64d5b5078017ea89fd2
- Full Text :
- https://doi.org/10.1016/j.mssp.2015.10.028