High-power and low-noise blue-violet laser diodes on a GaN substrate

Next-generation optical disc systems are attracting strong interest and further increases in their recording capacity and speed are required according to T. Nishihara et al. (2003) and T. Nakai et al. (2003). In order to achieve these increases, a high-power blue-violet laser diode is indispensable. On the other hand, the noise characteristic is also an important factor in blue-violet laser diodes for practical use because a high-level of noise raises the jitter level of the optical disc system. In this study, we have successfully fabricated blue-violet laser diodes with high power (100 mW) and low-noise (-130 dB/Hz @ 5 mW) characteristics.