Back to Search
Start Over
A heterojunction bipolar transistor with a thin /spl alpha/-Si emitter
- Source :
- IEEE Transactions on Electron Devices. 41:932-935
- Publication Year :
- 1994
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1994.
-
Abstract
- In this paper, a modified silicon heterojunction bipolar transistor is proposed and demonstrated. The structure uses a very thin n/sup +/ amorphous silicon layer as the emitter to enhance the emitter injection efficiency and reduce the emitter resistance as well as improve the frequency response of the device. >
- Subjects :
- Amorphous silicon
Materials science
Silicon
Heterostructure-emitter bipolar transistor
Heterojunction bipolar transistor
chemistry.chemical_element
Thermionic emission
Hardware_PERFORMANCEANDRELIABILITY
chemistry.chemical_compound
Hardware_INTEGRATEDCIRCUITS
Electrical and Electronic Engineering
Common emitter
business.industry
Bipolar junction transistor
technology, industry, and agriculture
Electrical engineering
Heterojunction
equipment and supplies
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Electronic, Optical and Magnetic Materials
stomatognathic diseases
chemistry
ComputerApplications_GENERAL
Physics::Accelerator Physics
Optoelectronics
business
Subjects
Details
- ISSN :
- 15579646 and 00189383
- Volume :
- 41
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........c041f56bfc39fc461aca54ed94bc06fd
- Full Text :
- https://doi.org/10.1109/16.293304