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Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications
- Source :
- SPIE Proceedings.
- Publication Year :
- 2016
- Publisher :
- SPIE, 2016.
-
Abstract
- Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
- Subjects :
- Photoluminescence
Materials science
business.industry
Annealing (metallurgy)
Slope efficiency
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Semiconductor laser theory
010309 optics
Quantum dot laser
0103 physical sciences
Radiative transfer
Optoelectronics
Laser power scaling
0210 nano-technology
business
Non-radiative recombination
Subjects
Details
- ISSN :
- 0277786X
- Database :
- OpenAIRE
- Journal :
- SPIE Proceedings
- Accession number :
- edsair.doi...........c01589336e7966468e23b725677a7879