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A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT
- Source :
- IEEE Microwave and Wireless Components Letters. 29:282-284
- Publication Year :
- 2019
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 2019.
-
Abstract
- We report here a compact 140-GHz, 150-mW high-gain solid-state power amplifier (SSPA) monolithic microwave integrated circuit (MMIC) demonstrated in a 250-nm InP HBT technology. It utilizes five-gain stages and two-way on-chip power combining. The amplifier measures 29.5-dB mid-band $S_{21}$ gain and over 125-mW output power across 115–150-GHz operation. The peak 153-mW output power was measured at 140 GHz using only 2.7-mW RF input power—the associated large-signal gain is 17.5 dB with 9.8% power added efficiency (PAE). The 140-GHz OP1 dB 1-dB gain compression power is 106 mW with 7.0% PAE. The dc power dissipation is 1.54 W and its size is only 0.75 mm2. The 3-dB $S_{21}$ gain roll-off is between 112 and 147 GHz. The 115–150-GHz output power variation at 0-dBm input drive is only ±0.5 dB. The peak PAE varies between 8.2% and 10.5%. This D-band result improves upon by $2.3\times $ at 140 GHz the state-of-the-art peak RF power previously demonstrated by SSPA MMICs.
- Subjects :
- Power-added efficiency
Materials science
business.industry
Amplifier
Heterojunction bipolar transistor
RF power amplifier
020206 networking & telecommunications
Gain compression
02 engineering and technology
Condensed Matter Physics
Electricity generation
0202 electrical engineering, electronic engineering, information engineering
Optoelectronics
Radio frequency
Electrical and Electronic Engineering
business
Monolithic microwave integrated circuit
Subjects
Details
- ISSN :
- 15581764 and 15311309
- Volume :
- 29
- Database :
- OpenAIRE
- Journal :
- IEEE Microwave and Wireless Components Letters
- Accession number :
- edsair.doi...........c000c60c5ed1acee676f0be6de052980
- Full Text :
- https://doi.org/10.1109/lmwc.2019.2902333