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A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT

Authors :
Petra Rowell
Zach Griffith
Miguel Urteaga
Source :
IEEE Microwave and Wireless Components Letters. 29:282-284
Publication Year :
2019
Publisher :
Institute of Electrical and Electronics Engineers (IEEE), 2019.

Abstract

We report here a compact 140-GHz, 150-mW high-gain solid-state power amplifier (SSPA) monolithic microwave integrated circuit (MMIC) demonstrated in a 250-nm InP HBT technology. It utilizes five-gain stages and two-way on-chip power combining. The amplifier measures 29.5-dB mid-band $S_{21}$ gain and over 125-mW output power across 115–150-GHz operation. The peak 153-mW output power was measured at 140 GHz using only 2.7-mW RF input power—the associated large-signal gain is 17.5 dB with 9.8% power added efficiency (PAE). The 140-GHz OP1 dB 1-dB gain compression power is 106 mW with 7.0% PAE. The dc power dissipation is 1.54 W and its size is only 0.75 mm2. The 3-dB $S_{21}$ gain roll-off is between 112 and 147 GHz. The 115–150-GHz output power variation at 0-dBm input drive is only ±0.5 dB. The peak PAE varies between 8.2% and 10.5%. This D-band result improves upon by $2.3\times $ at 140 GHz the state-of-the-art peak RF power previously demonstrated by SSPA MMICs.

Details

ISSN :
15581764 and 15311309
Volume :
29
Database :
OpenAIRE
Journal :
IEEE Microwave and Wireless Components Letters
Accession number :
edsair.doi...........c000c60c5ed1acee676f0be6de052980
Full Text :
https://doi.org/10.1109/lmwc.2019.2902333