Analysis on New Read Disturbance Induced by Hot Carrier Injections in 3-D Channel-Stacked NAND Flash Memory

MLA

Sihyun Kim, et al. “Analysis on New Read Disturbance Induced by Hot Carrier Injections in 3-D Channel-Stacked NAND Flash Memory.” IEEE Transactions on Electron Devices, vol. 66, Aug. 2019, pp. 3326–30. EBSCOhost, https://doi.org/10.1109/ted.2019.2920127.

APA

Sihyun Kim, Jong-Ho Lee, Do-Bin Kim, Byung-Gook Park, Ryoongbin Lee, Daewoong Kwon, & Junil Lee. (2019). Analysis on New Read Disturbance Induced by Hot Carrier Injections in 3-D Channel-Stacked NAND Flash Memory. IEEE Transactions on Electron Devices, 66, 3326–3330. https://doi.org/10.1109/ted.2019.2920127

Chicago

Sihyun Kim, Jong-Ho Lee, Do-Bin Kim, Byung-Gook Park, Ryoongbin Lee, Daewoong Kwon, and Junil Lee. 2019. “Analysis on New Read Disturbance Induced by Hot Carrier Injections in 3-D Channel-Stacked NAND Flash Memory.” IEEE Transactions on Electron Devices 66 (August): 3326–30. doi:10.1109/ted.2019.2920127.