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Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film
- Source :
- Applied Surface Science. 419:365-372
- Publication Year :
- 2017
- Publisher :
- Elsevier BV, 2017.
-
Abstract
- Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 ¯ ]||VO2[100]||Al2O3[1 1 ¯ 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.
- Subjects :
- 010302 applied physics
Materials science
business.industry
General Physics and Astronomy
Heterojunction
02 engineering and technology
Surfaces and Interfaces
General Chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Epitaxy
01 natural sciences
Surfaces, Coatings and Films
symbols.namesake
X-ray photoelectron spectroscopy
Electron diffraction
0103 physical sciences
symbols
Sapphire
Optoelectronics
Thin film
0210 nano-technology
business
Raman spectroscopy
Single crystal
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 419
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........bfd0e2baa81d61fdf65af71fda9e3689