Parameter extraction of threshold voltage model of BSIM3V3

Authors :: Huang Jing
Cui Peng
Zhang Li'ang
Ji Lijiu
Yang Bing
Gu Jun
Source :: ASICON 2001. 2001 4th International Conference on ASIC Proceedings (Cat. No.01TH8549).
Publication Year :: 2002
Publisher :: IEEE, 2002.
Abstract: The threshold model is one of the models of BSIM3V3. The authors have investigated the parameter extraction of the threshold model. Both single-bin and multi-bin algorithms are implemented which avoid the parameter redundancy problem. Refined device schemes are designed to support the group extraction strategy. For the single-bin algorithm, the relative error of the extracted values of the parameters is less than 0.02%.

Subjects :: symbols.namesake
Mathematical optimization
Redundancy problem
Estimation theory
Approximation error
Extraction (chemistry)
MOSFET
symbols
Threshold model
Newton's method
Algorithm
Threshold voltage
Mathematics

Database :: OpenAIRE
Journal :: ASICON 2001. 2001 4th International Conference on ASIC Proceedings (Cat. No.01TH8549)
Accession number :: edsair.doi...........bfc8a6fe908cfe345281b0380941cb7b
Full Text :: https://doi.org/10.1109/icasic.2001.982655