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GaN nanorods on V-groove textured Si (111): significant light trapping for photoelectrocatalytic water splitting

Authors :
Dong-Jin Nam
Maddaka Reddeppa
Moon-Deock Kim
Song-Gang Kim
Chandrakalavathi Thota
Hyeonseok Woo
Source :
Applied Physics Letters. 119:023901
Publication Year :
2021
Publisher :
AIP Publishing, 2021.

Abstract

Although gallium nitride (GaN) nanostructures are auspicious for photocatalytic activity, geometrical optimization has paid much attention for a significant light trapping in photoelectrochemical applications. To minimize the optical losses, we designed a prototype V-groove textured Si (100) with (111) facets, and GaN nanorods (NRs) were grown over a prototype substrate using plasma-assisted molecular beam epitaxy. The photocurrent density of V-groove textured GaN NRs in the NaOH electrolyte is found to be 801.62 μA/cm2 at 1.14 V vs reversible hydrogen electrode, which was 2.1-fold larger than that of GaN NRs on plain Si (111). Using this prototype V-groove textured Si(100) with (111) facets, a significant light can be trapped and modulated into GaN NRs. Furthermore, the heterostructure between GaN NRs and V-groove textured Si stimulates effective charge separation and transportation. These results represent an important forward step in solar photoelectrolysis.

Details

ISSN :
10773118 and 00036951
Volume :
119
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........bfbb4575cdc5a87d23cae0612f2954e6
Full Text :
https://doi.org/10.1063/5.0055685