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GaN nanorods on V-groove textured Si (111): significant light trapping for photoelectrocatalytic water splitting
- Source :
- Applied Physics Letters. 119:023901
- Publication Year :
- 2021
- Publisher :
- AIP Publishing, 2021.
-
Abstract
- Although gallium nitride (GaN) nanostructures are auspicious for photocatalytic activity, geometrical optimization has paid much attention for a significant light trapping in photoelectrochemical applications. To minimize the optical losses, we designed a prototype V-groove textured Si (100) with (111) facets, and GaN nanorods (NRs) were grown over a prototype substrate using plasma-assisted molecular beam epitaxy. The photocurrent density of V-groove textured GaN NRs in the NaOH electrolyte is found to be 801.62 μA/cm2 at 1.14 V vs reversible hydrogen electrode, which was 2.1-fold larger than that of GaN NRs on plain Si (111). Using this prototype V-groove textured Si(100) with (111) facets, a significant light can be trapped and modulated into GaN NRs. Furthermore, the heterostructure between GaN NRs and V-groove textured Si stimulates effective charge separation and transportation. These results represent an important forward step in solar photoelectrolysis.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 119
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........bfbb4575cdc5a87d23cae0612f2954e6
- Full Text :
- https://doi.org/10.1063/5.0055685