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Quantum mechanical effects in nanometer field effect transistors
- Source :
- Applied Physics Letters. 90:143108
- Publication Year :
- 2007
- Publisher :
- AIP Publishing, 2007.
-
Abstract
- The atomistic pseudopotential quantum mechanical calculations for million atom nanosized metal-oxide-semiconductor field-effect transistors (MOSFETs) are presented. When compared with semiclassical Thomas-Fermi simulation results, there are significant differences in I-V curve, electron threshold voltage, and gate capacitance. In many aspects, the quantum mechanical effects exacerbate the problems encountered during device minimization, and it also presents different mechanisms in controlling the behaviors of a nanometer device than the classical one.
- Subjects :
- Pseudopotential
Condensed Matter::Materials Science
Materials science
Physics and Astronomy (miscellaneous)
Condensed matter physics
Nanoelectronics
MOSFET
Semiclassical physics
Field-effect transistor
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Capacitance
Quantum
Threshold voltage
Subjects
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 90
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........bfb301f453f819bad08d3bfb03f61a58