Back to Search Start Over

Quantum mechanical effects in nanometer field effect transistors

Authors :
Shu-Shen Li
Jun-Wei Luo
Lin-Wang Wang
Jian-Bai Xia
Source :
Applied Physics Letters. 90:143108
Publication Year :
2007
Publisher :
AIP Publishing, 2007.

Abstract

The atomistic pseudopotential quantum mechanical calculations for million atom nanosized metal-oxide-semiconductor field-effect transistors (MOSFETs) are presented. When compared with semiclassical Thomas-Fermi simulation results, there are significant differences in I-V curve, electron threshold voltage, and gate capacitance. In many aspects, the quantum mechanical effects exacerbate the problems encountered during device minimization, and it also presents different mechanisms in controlling the behaviors of a nanometer device than the classical one.

Details

ISSN :
10773118 and 00036951
Volume :
90
Database :
OpenAIRE
Journal :
Applied Physics Letters
Accession number :
edsair.doi...........bfb301f453f819bad08d3bfb03f61a58