Back to Search
Start Over
Doping of low-temperature GaAs and GaMnAs with carbon
- Source :
- Applied Physics Letters. 85:4678-4680
- Publication Year :
- 2004
- Publisher :
- AIP Publishing, 2004.
-
Abstract
- The incorporation of carbon in low-temperature (LT) GaAs and GaMnAs layers deposited by molecular-beam epitaxy under various growth conditions has been investigated. The lattice parameter depends on Mn content, C content, and the growth conditions which strongly affect Mn, C, and point defect incorporation. We found optimum growth conditions (Tsub=270°C, the beam equivalent pressure ratio is 5, growth rate is 0.1nm∕s) at which high-quality GaMnAs layers with moderate Mn content as well as LT-GaAs layers were deposited, which were efficiently p-doped by carbon. LT GaAs:C revealed the same electrical activation of carbon of about 50% at a high doping level p=5×1019cm−3 as observed in high-temperature GaAs:C. The Curie temperature as well as the saturation magnetization of GaMnAs decreases with C doping. This suggests a reduced amount of Mn contributing to the ferromagnetic phase in GaMnAs:C.
Details
- ISSN :
- 10773118 and 00036951
- Volume :
- 85
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters
- Accession number :
- edsair.doi...........bfb284413266a299d0def02c99cc7bbf
- Full Text :
- https://doi.org/10.1063/1.1819522