Design of a 28-GHz low noise amplifier using 0.15-um InGaAs pHEMT E-mode technology

Authors :: Bonghyuk Park
Sunwoo Kong
Cheol Ho Kim
Hui Dong Lee
Source :: 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
Publication Year :: 2017
Publisher :: IEEE, 2017.
Abstract: We present a 28-GHz low-noise amplifier (LNA) using 0.15-um InGaAs pHEMT enhancement-mode (E-mode) technology. The 28-GHz LNA exhibits a gain of 22.2 dB and a 3-dB bandwidth of 14.1 GHz (22.7–36.8 GHz) under 3-V supply with 38.5-mA current consumption. The simulation results of the LNA show a noise figure (NF) of 2.13 dB and a P1dB of 10.8 dBm. The chip size is 1488 um × 796 um.

Subjects :: Materials science
business.industry
Amplifier
Chip size
Bandwidth (signal processing)
Electrical engineering
020206 networking & telecommunications
02 engineering and technology
High-electron-mobility transistor
Noise figure
Low-noise amplifier
Current consumption
Extremely high frequency
0202 electrical engineering, electronic engineering, information engineering
business

Database :: OpenAIRE
Journal :: 2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)
Accession number :: edsair.doi...........bee63b40448c1ee25972750ef64a6fe1
Full Text :: https://doi.org/10.1109/rfit.2017.8048248

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