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TP-C13 ionization coefficients for electrons and holes in GaSb p-i-n and InP Schottky avalanche photodiodes
- Source :
- IEEE Transactions on Electron Devices. 26:1845-1846
- Publication Year :
- 1979
- Publisher :
- Institute of Electrical and Electronics Engineers (IEEE), 1979.
Details
- ISSN :
- 00189383
- Volume :
- 26
- Database :
- OpenAIRE
- Journal :
- IEEE Transactions on Electron Devices
- Accession number :
- edsair.doi...........beacdc72f13f0f49e37041c617294bf9