TP-C13 ionization coefficients for electrons and holes in GaSb p-i-n and InP Schottky avalanche photodiodes

Authors :: I. Strottner
W. Kuebart
O. Hildebrand
R. Deufel
M.H. Pilkuhn
K.W. Benz
Source :: IEEE Transactions on Electron Devices. 26:1845-1846
Publication Year :: 1979
Publisher :: Institute of Electrical and Electronics Engineers (IEEE), 1979.

Subjects :: Avalanche diode
Materials science
Single-photon avalanche diode
business.industry
Ionization
Schottky diode
Optoelectronics
Electron
Electrical and Electronic Engineering
business
Avalanche photodiode
Avalanche breakdown
Electronic, Optical and Magnetic Materials

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