Reflector Influence on Rapid Heating of Minimal Manufacturing Chemical Vapor Deposition Reactor

A small-sized reactor for producing a silicon epitaxial film on a half-inch silicon wafer was studied, taking into account the heat transport near the wafer. The wafer temperature slowly changed over a long time period when the reflector was made of thick plates. In contrast, when thin plates were employed as the reflector material, the wafer temperature quickly increased and easily reached a steady state. Thus, the reactor parts set near the wafer should be small, slim and thin. With the help of wafer rotation and a highly heat-conductive susceptor, a symmetrical and uniform silicon epitaxial film thickness profile could be obtained. © The Author(s) 2016. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0251605jss] All rights reserved.