36.3: High Quality Poly‐Si Crystallized at 400 °C by Field Enhanced SMC

A-Si layer was crystallized at a temperature of 400 °C in the presence of a modest electric field of 100 V/cm. An accumulation of needlelike crystallites in the crystallized poly-Si has been found after crystallization. This results from the migration of NiSi2 precipitates through a-Si. The field effect mobility and threshold voltage for a SMC poly-Si TFT using a maximum process temperature of 400 °C were 76 cm2/Vs and 0.8 V, respectively. The performance of a SMC poly-Si TFT is comparable to that of an ELA poly-Si TFT.