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Enhanced Optical Properties of Silicon Based Quantum Dot Heterostructures
- Source :
- Defect and Diffusion Forum. 386:68-74
- Publication Year :
- 2018
- Publisher :
- Trans Tech Publications, Ltd., 2018.
-
Abstract
- New approaches to enhance properties of silicon based quantum dot heterostructures for optical device application were developed. That is strain driven heteroepitaxy, small-sized quantum dots, elemental compositions of the heterointerface, virtual substrate, plasmonic effects, and the quantum dot charging occupation with holes in epitaxially grown Ge quantum dots (QDs) on Si (100). Experiments have shown extraordinary optical properties of Ge/Si QDs heterostructures and mid-infrared quantum dot photodetectors performance.
- Subjects :
- Radiation
Materials science
business.industry
Surface plasmon
Physics::Optics
Heterojunction
02 engineering and technology
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Silicon based
Condensed Matter::Materials Science
Quantum dot
0103 physical sciences
Polariton
Optoelectronics
General Materials Science
010306 general physics
0210 nano-technology
business
Luminescence
Subjects
Details
- ISSN :
- 16629507
- Volume :
- 386
- Database :
- OpenAIRE
- Journal :
- Defect and Diffusion Forum
- Accession number :
- edsair.doi...........be255bbcd36767d120d5072371386d52