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Formation of high quality gallium nitride thin films on Ga-diffused Si(1 1 1) substrate
- Source :
- Applied Surface Science. 210:153-157
- Publication Year :
- 2003
- Publisher :
- Elsevier BV, 2003.
-
Abstract
- High quality gallium nitride thin films have been successfully grown on the Ga-diffused Si(1 1 1) substrates through ammoniating Ga 2 O 3 thin films deposited by r.f. magnetron sputtering. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), atomic force microscope (AFM) and photoluminescence (PL) were used to characterize the synthesized samples. The analyses reveal that the formed films are high quality polycrystalline hexagonal gallium nitride. The as-formed GaN films show a flat surface topography with RMS roughness varied from 29 to 48 A. The strong near-band-edge-emission peak around 368 nm was observed at room temperature. This is a novel method to fabricate GaN thin films based on the direct reaction between Ga 2 O 3 and NH 3 on the Ga-diffused Si(1 1 1) substrates.
- Subjects :
- Materials science
Photoluminescence
Analytical chemistry
General Physics and Astronomy
Gallium nitride
Surfaces and Interfaces
General Chemistry
Substrate (electronics)
Sputter deposition
Condensed Matter Physics
Surfaces, Coatings and Films
chemistry.chemical_compound
Crystallography
chemistry
X-ray photoelectron spectroscopy
Transmission electron microscopy
Cavity magnetron
Thin film
Subjects
Details
- ISSN :
- 01694332
- Volume :
- 210
- Database :
- OpenAIRE
- Journal :
- Applied Surface Science
- Accession number :
- edsair.doi...........be19b62012d657480e76fcc719c65059