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Impact of Ultrathin C60 on Perovskite Photovoltaic Devices
- Source :
- ACS Nano. 12:876-883
- Publication Year :
- 2018
- Publisher :
- American Chemical Society (ACS), 2018.
-
Abstract
- Halide perovskite solar cells have seen dramatic progress in performance over the past several years. Certified efficiencies of inverted structure (p-i-n) devices have now exceeded 20%. In these p-i-n devices, fullerene compounds are the most popular electron-transfer materials. However, the full function of fullerenes in perovskite solar cells is still under investigation, and the mechanism of photocurrent hysteresis suppression by fullerene remains unclear. In previous reports, thick fullerene layers (>20 nm) were necessary to fully cover the perovskite film surface to make good contact with perovskite film and avoid large leakage currents. In addition, the solution-processed fullerene layer has been broadly thought to infiltrate into the perovskite film to passivate traps on grain boundary surfaces, causing suppressed photocurrent hysteresis. In this work, we demonstrate an efficient perovskite photovoltaic device with only 1 nm C60 deposited by vapor deposition as the electron-selective material. Util...
- Subjects :
- Photocurrent
Fullerene
Materials science
Passivation
business.industry
Photovoltaic system
General Engineering
General Physics and Astronomy
Halide
02 engineering and technology
Chemical vapor deposition
010402 general chemistry
021001 nanoscience & nanotechnology
01 natural sciences
0104 chemical sciences
Optoelectronics
General Materials Science
Grain boundary
0210 nano-technology
business
Leakage (electronics)
Subjects
Details
- ISSN :
- 1936086X and 19360851
- Volume :
- 12
- Database :
- OpenAIRE
- Journal :
- ACS Nano
- Accession number :
- edsair.doi...........bdfd19149b55e20a51d9f733db009f2f