Back to Search
Start Over
Non Destructive Inspection of Dislocations in SiC Wafer by Mirror Projection Electron Microscopy
- Source :
- Materials Science Forum. :402-406
- Publication Year :
- 2014
- Publisher :
- Trans Tech Publications, Ltd., 2014.
-
Abstract
- A mirror electron microscopy (MPJ) was developed for defect inspection in silicon carbide (SiC) wafer as non destructive, high spatial resolution and high throughput method. Each of three type dislocations, threading screw dislocation (TSD), threading edge dislocation (TED) and basal plane dislocations (BPD) in 4H-SiC wafer were identified in MPJ image as a dark dot with different type of tailing. This new method provides high performance inspection of defects in SiC possible without specimen pre-treatment.
- Subjects :
- Materials science
business.industry
Mechanical Engineering
Condensed Matter Physics
law.invention
chemistry.chemical_compound
Optics
chemistry
Mechanics of Materials
law
Nondestructive testing
High spatial resolution
Threading (manufacturing)
Silicon carbide
General Materials Science
Wafer
Electron microscope
Dislocation
business
Projection (set theory)
Subjects
Details
- ISSN :
- 16629752
- Database :
- OpenAIRE
- Journal :
- Materials Science Forum
- Accession number :
- edsair.doi...........bdfc969163e572fb080afea8ef8e7034