Thermal Transport across Ion-Cut Monocrystalline β-Ga2O3 Thin Films and Bonded β-Ga2O3–SiC Interfaces

Authors :: Mark S. Goorsky
Jingjing Shi
Kenny Huynh
Fengwen Mu
Samuel Graham
Wenhui Xu
Xin Ou
Michael E. Liao
Tiangui You
Tadatomo Suga
Zhe Cheng
Yekan Wang
Source :: ACS Applied Materials & Interfaces. 12:44943-44951
Publication Year :: 2020
Publisher :: American Chemical Society (ACS), 2020.
Abstract: The ultrawide band gap, high breakdown electric field, and large-area affordable substrates make β-Ga2O3 promising for applications of next-generation power electronics, while its thermal conductiv...

Subjects :: 010302 applied physics
Materials science
business.industry
Band gap
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Ion
Monocrystalline silicon
Surface activated bonding
Thermal conductivity
Electric field
0103 physical sciences
Thermal
Optoelectronics
General Materials Science
Thin film
0210 nano-technology
business

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