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Analysis and Modeling of Drain-Induced Barrier Lowering Variation Induced by Random Dopants in Nanometer MOSFET Channel
- Source :
- Nanoscience and Nanotechnology Letters. 9:1213-1216
- Publication Year :
- 2017
- Publisher :
- American Scientific Publishers, 2017.
Details
- ISSN :
- 19414900
- Volume :
- 9
- Database :
- OpenAIRE
- Journal :
- Nanoscience and Nanotechnology Letters
- Accession number :
- edsair.doi...........bd7565f87f6aa34d7202d1989eb1bea3
- Full Text :
- https://doi.org/10.1166/nnl.2017.2435